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MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
FS3UM-10
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
q
VDSS ................................................................................ 500V rDS (ON) (MAX) ................................................................. 4.4 ID ............................................................................................ 3A
TO-220
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 500 30 3 9 60 -55 ~ +150 -55 ~ +150 2.0
Unit V V A A W C C g
Feb.1999
Typical value
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 30 -- -- 2 -- -- 1.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 3.4 3.4 1.5 300 35 6 13 10 30 30 1.5 -- Max. -- -- 10 1 4 4.4 4.4 -- -- -- -- -- -- -- -- 2.0 2.08
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50
IS = 1A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 TC = 25C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 5 TC = 25C Pulse Test VGS = 20V 10V 8V 6V PD = 60W tw=10s
80
DRAIN CURRENT ID (A)
100s 1ms 10ms DC
60
40
20
0
0
50
100
150
200
10-2
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 10 PD = 60W TC = 25C Pulse Test DRAIN CURRENT ID (A) VGS = 20V 10V 8V
DRAIN CURRENT ID (A)
8
4
6
3
4
6V 5V
2 5V
2
1
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 TC = 25C Pulse Test 8
TC = 25C Pulse Test 32
VGS = 10V
24 ID = 4A 16 3A 2A 1A 0 0 4 8 12 16 20
6 20V 4
8
2 0 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25C VDS = 50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
8
6
3 2 100 7 5 3 2 10-1 -1 10 23
TC = 25C
4
75C 125C
2
0
0
4
8
12
16
20
5 7 100
23
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 102 7 5 3 2 Coss 5 Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50
3 2 102 7 5 3 2
tf
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
101 7 Tch = 25C Crss 5 f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
td(on)
101 tr 7 5 10-1 2 3
5 7 100
23
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 10 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TC = 125C VGS = 0V Pulse Test 25C 6 75C
GATE-SOURCE VOLTAGE VGS (V)
16
SOURCE CURRENT IS (A)
20
Tch = 25C ID = 3A VDS = 100V 200V 12 400V 8
8
4
4
2
0
0
4
8
12
16
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.0
2.0
1.0
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25C)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10-1 7 5 3 2
0.1
1.0
0.8
0.05 0.02 0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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